150V/180A N-Channel Super Trench Power MOSFET NCEP15T18T with An Extremely Low Combination of RDS(ON) and Qg

2024-02-21 NCE
N-Channel Super Trench Power MOSFET,NCEP15T18T,NCE

The series of devices NCEP15T18T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This N-Channel Super Trench Power MOSFET device is ideal for high-frequency switching and synchronous rectification.



General Features 

VDS=150V,ID=180A, RDS(ON)=4.45mΩ, typical@VGS=10V 

Excellent gate charge x RDS(on) product(FOM) 

Very low on-resistance RDS(on) 

175℃ operating temperature 

Pb-free lead plating 

100% UIS TESTED

100% ΔVds TESTED


Application

DC/DC Converter

Ideal for high-frequency switching and synchronous rectification


Absolute Maximum Ratings (TC=25℃, unless otherwise noted)


Thermal Characteristic


Electrical Characteristics (TC=25℃, unless otherwise noted)

Package Marking and Ordering Information

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