60V/315A Automotive N-Channel Super Trench II Power MOSFET NCEAP016N60VD with AEC-Q101 qualified

2023-12-14 NCE
Automotive N-Channel Super Trench II Power MOSFET,Power MOSFET,NCEAP016N60VD,NCE

The NCE NCEAP016N60VD Automotive N-Channel Super Trench II Power MOSFET uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.



General Features

VDS=60V, ID=315A(Silicon Limited) RDS(ON)=1.1mΩ , typical@VGS=10V 

Excellent gate charge x RDS(on) product(FOM) 

Very low on-resistance RDS(on) 

175℃ operating temperature 

Pb-free lead plating 

100% UIS tested 

100% ΔVds tested 

AEC-Q101 qualified


Application 

Automotive application 

DC/DC Converter 

Ideal for high-frequency switching and synchronous rectification


Absolute Maximum Ratings (TC=25℃ unless otherwise noted)

Thermal Characteristic

Electrical Characteristics (TC=25℃ unless otherwise noted)

Notes: 

1. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 

2. Guaranteed by design, not subject to production 

3. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175℃. The SOA curve provides a single pulse rating.


Package Marking and Ordering Information

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