NCEP045N10G NCE N-Channel Super Trench II Power MOSFET
The NCEP045N10G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R-DS(ON) and Q-g. This device is ideal for high-frequency switching and synchronous rectification.
■General Features
●V-DS =100V,I-D =125A
▲R-DS(ON)=3.8mΩ ( typical )V-GS=10V
●Excellent gate charge x R-DS(on) product(FOM)
●Very low on-resistance R-DS(on)
●150 °C operating temperature
●Pb-free lead plating
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Datasheet |
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Please see the document for details |
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DFN5X6-8L |
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English Chinese Chinese and English Japanese |
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2020/03/24 |
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V1.0 |
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466 KB |
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