Wuxi NCE Power Co., Ltd Page V1.0
1
NCEP045N10G
http://www.ncepower.com
NCE N-Channel Super Trench II Power MOSFET
Description
The NCEP045N10G uses Su per Trench II technology that is
uniquely optimized to provide the most efficient high frequency
switching performance. Both conduction and switching power
losses are minimized due to an extremely low combination of
R
DS(ON)
and Q
g
. This device is ideal for high-frequency switching
and synchronous rectification.
Application
● DC/DC Converter
● Ideal for high-frequency switching and synchronous rectification
General Features
● V
DS
=100V,I
D
=125A
R
DS(ON)
=3.8mΩ (typical) @ V
GS
=10V
● Excellent gate charge x R
DS(on)
product(FOM)
● Very low on-resistance R
DS(on)
● 150 °C operating temperature
● Pb-free lead plating
100% UIS TESTED!
100% ∆Vds TESTED!
Package Marking and Ordering Information
Device Marking Device Device Package Reel Size Tape width Quantity
P045N10G NCEP045N10G DFN5X6-8L - - -
Absolute Maximum Ratings (T
C
=25℃unless otherwise noted)
Parameter Symbol Limit Unit
Drain-Source Voltage
V
DS
100 V
Gate-Source Voltage
V
GS
±20 V
Drain Current-Continuous
I
D
125 A
Drain Current-Continuous(T
C
=100 )℃ I
D
(100℃) 90 A
Pulsed Drain Current
I
DM
500 A
Maximum Power Dissipation
P
D
150 W
Derating factor
1.2 W/℃
Single pulse avalanche energy
(Note 5)
E
AS
720 mJ
Operating Junction and Storage Temperature Range
T
J
,T
STG
-55 To 150 ℃
Thermal Characteristic
Thermal Resistance,Junction-to-Case
(Note 2)
R
θJC
0.83 /W℃
Bottom View
Top View
DFN 5X6
Schematic Diagram
Wuxi NCE Power Co., Ltd Page V1.0
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NCEP045N10G
http://www.ncepower.com
Electrical Characteristics (T
C
=25℃unless otherwise noted)
Parameter Symbol Condition Min Typ Max Unit
Off Characteristics
Drain-Source Breakdown Voltage BV
DSS
V
GS
=0V I
D
=250μA 100 - V
Zero Gate Voltage Drain Current I
DSS
V
DS
=100V,V
GS
=0V - - 1 μA
Gate-Body Leakage Current I
GSS
V
GS
=±20V,V
DS
=0V - - ±100 nA
On Characteristics
(Note 3)
Gate Threshold Voltage V
GS(th)
V
DS
=V
GS
,I
D
=250μA 2 3 4 V
Drain-Source On-State Resistance R
DS(ON)
V
GS
=10V, I
D
=65A - 3.8 4.5 mΩ
Forward Transconductance g
FS
V
DS
=5V,I
D
=65A 120 - S
Dynamic Characteristics
(Note4)
Input Capacitance C
lss
- 5500 - PF
Output Capacitance C
oss
- 600 - PF
Reverse Transfer Capacitance C
rss
V
DS
=50V,V
GS
=0V,
F=1.0MHz
- 21 - PF
Switching Characteristics
(Note 4)
Turn-on Delay Time t
d(on)
- 21 - nS
Turn-on Rise Time t
r
- 13 - nS
Turn-Off Delay Time t
d(off)
- 40 - nS
Turn-Off Fall Time t
f
V
DD
=50V,I
D
=65A,
V
GS
=10V,R
G
=3Ω
- 12 - nS
Total Gate Charge Q
g
- 93 - nC
Gate-Source Charge Q
gs
- 21 nC
Gate-Drain Charge Q
gd
V
DS
=50V,I
D
=65A,
V
GS
=10V
- 27 nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
V
SD
V
GS
=0V,I
S
=65A - 1.2 V
Diode Forward Current
(Note 2)
I
S
- - 125 A
Reverse Recovery Time t
rr
- 68 - nS
Reverse Recovery Charge Qrr
T
J
= 25°C, I
F
=65A
di/dt = 100A/μs
(Note3)
- 115 - nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25 ,V℃
DD
=50V,V
G
=10V,L=0.5mH,Rg=25Ω