MOSFETs SL5N100F with a Drain-source Voltage of up to 1kV Is Primarily Suitable for Various Types of Switching Circuits
Among them, the high-voltage MOSFET SL5N100F is a star product in SLKOR Micro Semiconductor's product line. The SL5N100F adopts an N-channel structure, with a drain-source voltage (Vdss) of up to 1000V, a continuous drain current (Id) of 5A, and a power dissipation (Pd) of up to 60W. Its on-state resistance (RDS(on)@Vgs,Id) is only 4.2Ω, and the threshold voltage (Vgs(th)@Id) is 3.5V@100μA, with a TO-220F package. These parameters demonstrate that the SL5N100F exhibits excellent performance in high-voltage, medium current, and medium-power applications.
Fig.1
In addition to its excellent performance parameters, the SL5N100F possesses many unique features. Minimized gate charge, extremely low intrinsic capacitance, and high dv/dt capability enable the SL5N100F to perform exceptionally well in switching applications. Its outstanding electrical performance and stability provide reliable support for various switching circuits, contributing to increased system efficiency and reliability.
Fig.2
In terms of applications, the SL5N100F is primarily suitable for various types of switching circuits. Whether in switch-mode power supplies and inverters in industrial control systems or power management modules in communication equipment and medical devices, the SL5N100F can demonstrate its outstanding performance, ensuring stable operation and efficient functioning of the systems.
In conclusion, Slkor Micro Semiconductor's high-voltage MOSFET SL5N100F showcases the company's strength and determination in product technology research and development as well as market expansion. Through continuous innovation and enhancement, Slkor Micro Semiconductor is committed to becoming a leader in the semiconductor field, providing customers with higher quality, high-performance products, and solutions, driving the advancement of the entire industry.
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