SLKOR 2N7002 N-channel Trench MOSFET Featuring Drain-source Voltage of 60V and Drain-source On-state Resistance of 7.5Ω
Today, SLKOR will introduce the 2N7002 Medium-Voltage N-Channel enhancement mode MOSFET from Slkor, which is supplied in the SOT-23 subminiature surface mounting package.
Fig.1
Description
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology.
This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance.
This can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A.
This N-channel Trench MOSFET is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Features
●High density cell design for extremely low RDS(ON).
●Voltage controlled small signal switch.
●Rugged and Reliable.
●High saturation current capability.
Applications
●This product is general usage and suitable for many different applications.
●Small Servo Motor Control
●Power MOSFET Gate Drivers
Quick reference data
Table.1
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