The 60V/340mA N-channel MOSFET 2N7002KDW Is Suitable for Various Medium-voltage Switching and Power Control Applications
In addition to switch control, the Medium-Voltage MOSFET can also adjust the intensity and direction of current based on instructions from the power management system. This capability enables the power management system to flexibly adjust the device's power supply according to different work scenarios and requirements. For instance, in the electric motor drive system of new energy vehicles, the power management system can achieve precise control over motor speed and power by adjusting the operational status of the Medium-Voltage MOSFET. Furthermore, the Medium-Voltage MOSFET features low on-state resistance and leakage current, helping to reduce energy loss within the power management system. In high-voltage, high-power environments, this low power consumption characteristic is particularly crucial. It not only enhances energy utilization efficiency but also prolongs the device's lifespan and reduces maintenance costs.
Medium Voltage MOSFET 2N7002KDW product photo
The 2N7002KDW is an N-channel MOSFET with a 60V drain-source voltage and 340mA continuous drain current, renowned for its low on-state resistance (5Ω@10V) and relatively low threshold voltage (2.5V@1mA). These characteristics make the 2N7002KDW an ideal power semiconductor device in power management systems, especially in situations requiring high efficiency and precision control. It is suitable for various medium-voltage switching and power control applications.
SLKOR Medium Voltage MOSFET 2N7002KDW
The Medium-Voltage MOSFET 2N7002KDW is encapsulated in epoxy resin that meets the UL94V-0 rating, indicating excellent flame-retardant properties. This feature effectively reduces the risk of fire under equipment faults or abnormal operating conditions, thereby enhancing the overall system's safety. Another notable feature of the 2N7002KDW is its suitability for Roston's high-density battery designs, enabling stable current and voltage control during operation. This design minimizes performance instability or damage caused by voltage fluctuations or current surges. The high-density battery design not only enhances the power density and efficiency of the MOSFET but also demonstrates outstanding performance in high-power, high-density applications such as electric motor drives in new energy vehicles and industrial automation equipment. Its high saturation current capability provides increased reliability and stability when handling high-current, high-power signals, contributing to improved system response speed and efficiency, thus enhancing overall performance. Furthermore, the integration of ESD protection circuits in the 2N7002KDW effectively guards against component damage from electrostatic discharge, thereby improving the device's resistance to electrostatic interference. This is crucial for ensuring stable operation and prolonging the device's lifespan.
Parameters of Slkor Medium Voltage MOSFET 2N7002KDW
With continuous technological advancements and expanding markets, the prospects for the application of Medium-Voltage MOSFET in power management systems are becoming increasingly promising. On one hand, as fields such as new energy vehicles and industrial automation rapidly expand, the demand for efficient and reliable power management systems will continue to grow. On the other hand, with the continuous emergence of new materials and processes, the performance of Medium-Voltage MOSFET will be further enhanced, enabling its application in power management systems to become more extensive and profound. In summary, the collaborative work between Medium-Voltage MOSFET and power management systems is crucial for achieving efficient and stable operation of equipment. By providing powerful technical support through high-precision current switching and regulation, Medium-Voltage MOSFET plays a key role in power management systems.
With the continuous advancement of technology and the expanding scope of applications, we have every reason to believe that Medium-Voltage MOSFET will play an increasingly important role in power management systems, contributing more power to the energy utilization and performance enhancement of modern electronic devices.
- +1 Like
- Add to Favorites
Recommend
- SLKOR 2N7002 N-channel Trench MOSFET Featuring Drain-source Voltage of 60V and Drain-source On-state Resistance of 7.5Ω
- The 60V/1A N-channel MOSFET MOSFET 2N7002KT Features Low On-Resistance and Relatively Low Threshold Voltage
- The 60V/340mA MOSFET 2N7002KW Achieves Efficient Power Control and Precise System Operation
- The 60V/300mA N-channel MOSFET 2N7002E Effectively Enhances the Efficiency, Stability and Reliability of Power Management Systems
- The 60V/3A N-channel MOSFET 2N7002T Features Low Input Capacitance and Low Input/Output Leakage
- Slkor Participated in the 8th Qianren Summit of Dajia Yuan
- Song Shiqiang from SLKOR Keynote Speech -How AI Empowers New Quality Productive Forces
- The Medium Voltage MOSFET SL4421 with a -60V Drain-source Voltage and a -8.5A Continuous Drain Current
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
