2N7002KDW Dual N-Channel Enhancement Mode MOSFET
■The 2N7002KDW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application
●General Features
■VDS = 60V ID =0.115 A
■RDS(ON) < 3Ω@ V GS=10V
■ESD Rating：HBM≥2000V
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[ Wireless charging ][ Boost driver ][ Brushless motor ][ Switching application ] |
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Datasheet |
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Please see the document for details |
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SOT-363 |
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English Chinese Chinese and English Japanese |
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2023/8/11 |
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855 KB |
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