2N7002KDW Dual N-Channel Enhancement Mode MOSFET
■The 2N7002KDW uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
●General Features
■VDS = 60V ID =0.115 A
■RDS(ON) < 3Ω@ V GS=10V
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Dual N-Channel Enhancement Mode MOSFET 、 Dual N-Channel MOSFET |
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[ Boost driver ][ Brushless motor ] |
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Datasheet |
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Please see the document for details |
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SOT-363 |
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English Chinese Chinese and English Japanese |
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2023/8/11 |
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702 KB |
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