Silicon Carbide cooperation between SEMIKRON and ROHM Semiconductor: ROHM’s SiC technology empowers SEMIKRON’s eMPack® for the next generation of electric vehicles
Nuremberg/Willich – July 14th, 2022: SEMIKRON, headquartered in Nuremberg, and the Kyoto-based company ROHM Semiconductor have been collaborating for more than ten years with regard to the implementation of silicon carbide (SiC) inside power modules. Recently, ROHM’s latest 4th generation of SiC MOSFETs has been fully qualified in SEMIKRON’s eMPack® modules for automotive use. Hence, both companies serve worldwide customers' needs.
The picture at the partnership ceremony
Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON (left), Peter Sontheimer, CSO at SEMIKRON (right)Wolfram Harnack, President at ROHM Semiconductor GmbH (center)
SEMIKRON announced it had secured a billion-Euro contract to supply its innovative eMPack® power modules to a major German car maker, beginning in 2025. The company developed a fully sintered assembly and connection technology ‘Direct Pressed Die’(DPD). This enables extremely compact, scalable, and reliable traction inverters. The eMPack® module technology has been specially designed for SiC-based converters of medium and high power in order to fully exploit the properties of the new semiconductor material. In addition, SEMIKRON provides evaluation boards for eMPack® that incorporate ROHM's gate driver ICs, helping customers shorten the time required for evaluation and adoption. In the future, SEMIKRON also plans to use ROHM's IGBTs in modules for industrial applications.
"Thanks to ROHM's SiC technology, SEMIKRON's innovative eMPack family of power modules is ready to make a significant contribution to reducing emissions through e-mobility," says Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON. "ROHM’s SiC technology provides more efficiency, performance, and reliability in automotive and also industrial applications."
SEMIKRON’s eMPack® Power Module Evaluation board for eMPack® equipped with ROHM’s gate driver IC
ROHM produces SiC components in-house in a vertically integrated manufacturing system and thus delivers high-quality, energy-saving products while achieving a constant market supply. ROHM’s production subsidiary SiCrystal, located in Nuremberg, Germany, plans to strongly grow its silicon carbide wafer capacities and human resources – to produce several 100,000 substrates a year.
“We are glad that SEMIKRON has selected ROHM as SiC supplier for the automotive qualified eMPack®. This partnership leads to a competitive solution for inverter application use inside electrical vehicles,” states Isao Matsumoto, President, and CEO of ROHM Co., Ltd. “ROHM offers a broad portfolio of SiC devices – from chips to packages. As the demand for SiC will continue to grow, ROHM will accelerate further investment and product development based on the technology we have cultivated as a leading SiC manufacturer. In addition, our company will continue to propose solutions and deliver customer support," Isao Matsumoto continues.
ROHM has been a leader in SiC device technology and products since it began the world's first mass production of SiC MOSFETs. ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters. Thus, the company develops advanced, energy-saving SiC devices that reduce environmental impact.
Both companies will continue to contribute to automotive technology innovations by providing optimal power solutions that meet market needs through the fusion of ROHM's device/control technologies and SEMIKRON's module technologies that can optimally combine them.
"Thanks to ROHM's SiC technology, SEMIKRON's innovative eMPack family of power modules is ready to make a significant contribution to reducing emissions through e-mobility," says Karl-Heinz Gaubatz, CEO and CTO at SEMIKRON. "ROHM’s SiC technology provides more efficiency, performance, and reliability in automotive and also industrial applications."
ROHM produces SiC components in-house in a vertically integrated manufacturing system and thus delivers high-quality, energy-saving products while achieving a constant market supply. ROHM’s production subsidiary SiCrystal, located in Nuremberg, Germany, plans to strongly grow its silicon carbide wafer capacities and human resources – to produce several 100,000 substrates a year.
“We are glad that SEMIKRON has selected ROHM as SiC supplier for the automotive qualified eMPack®. This partnership leads to a competitive solution for inverter application use inside electrical vehicles,” states Isao Matsumoto, President, and CEO of ROHM Co., Ltd. “ROHM offers a broad portfolio of SiC devices – from chips to packages. As the demand for SiC will continue to grow, ROHM will accelerate further investment and product development based on the technology we have cultivated as a leading SiC manufacturer. In addition, our company will continue to propose solutions and deliver customer support," Isao Matsumoto continues.
ROHM has been a leader in SiC device technology and products since it began the world's first mass production of SiC MOSFETs. ROHM’s latest 4th generation of SiC MOSFETs, which has been adopted by SEMIKRON, provides industry-leading low ON resistance with improved short-circuit withstand time. These characteristics contribute significantly to extending the driving length and miniaturizing the batteries of EVs when they are used in traction inverters. Thus, the company develops advanced, energy-saving SiC devices that reduce environmental impact.
Both companies will continue to contribute to automotive technology innovations by providing optimal power solutions that meet market needs through the fusion of ROHM's device/control technologies and SEMIKRON's module technologies that can optimally combine them.
- +1 Like
- Add to Favorites
Recommend
- 650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET
- 需要充电吗?具有开尔文源引脚的SiC MOSFET DIF120SIC053-AQ加速电动汽车充电过程
- SiC MOSFETs and SiC Schottky Diodes in TO-247-3L&4L for Sustainable Public Transportation
- Vincotech’s 70A flowPACK 1 SiC Modules Featuring Ultra-fast 900V SiC MOSFET for up to 400kHz switching frequency
- Achieve Zero Switching Loss with SiC MOSFET
- Ultra-Low On-Resistance 1200V/7mΩ SiC MOSFET N2M120007PP0 Launched by NEXIC for Renewable Energy Applications
- Littelfuse Unveils Industry’s First Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection
- Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.