SiC FETs, SiC JFETs and SiC Schottky Diodes Product Selector Guide
●Key Features
■Multiple VDS options: 650/750/900/1200/1700V
■Lowest R-DS(on)
▲6mΩ @ 750V
▲7mΩ @ 650V
▲9mΩ @ 1200V
■Gen 4 SiC FETs
▲750V, 6mΩ to 60mΩ options(UJ4C/SC Series)
▲1200V, 23mΩ to 70mΩ options(UF4C/SC Series)
■Best-in-class Figures of Merit (FoM)
▲R-DS(on) x Area
▲C-oss(er)/E-oss x RDS(on)
▲C-oss(tr) x RDS(on)
▲R-DS(on) x Qg
■5μs short-circuit withstand time @ 6mΩ,750v
■High-performance cascode configuration
■Excellent body diode (Vf < 2V)
■Drive with any Si and/or SiC gate drive voltage
■Superior thermal performance
■Integrated ESD and gate protection
■Industry standard packages, including Kelvin source
■Majority of devices are AEC-Q101 qualified
Selection catalogue
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