Product Selector Guide
SiC FETs, SiC JFETs and SiC Schottky Diodes
Q2 - 2022
www.unitedsic.com
High Performance SiC FETs
End Applicaons
• Electric Vehicles
• Motor Drives
• On-board Chargers
• Baery Chargers
• Wireless Chargers
• DC/DC Conversion
• Telecom and Server PSU
• Circuit Protecon
• Solar Inverters
• Energy Storage
Page 1
High Performance SiC FETs, JFETs and Schoky Diodes
Key Features
• Mulple VDS opons: 650/750/900/1200/1700V
• Lowest R
DS(on)
– 6mΩ @ 750V
– 7mΩ @ 650V
– 9mΩ @ 1200V
• Gen 4 SiC FETs
– 750V, 6mΩ to 60mΩ options (UJ4C/SC Series)
– 1200V, 23mΩ to 70mΩ opons (UF4C/SC Series)
• Best-in-class Figures of Merit (FoM)
– R
DS(on)
x Area
– C
oss(er)
/Eoss x RDS(on)
– C
oss(tr)
x RDS(on)
– R
DS(on)
x Qg
• 5µs short-circuit withstand me @ 6mΩ, 750V
• High-performance cascode conguraon
• Excellent body diode (Vf < 2V)
• Drive with any Si and/or SiC gate drive voltage
• Superior thermal performance
• Integrated ESD and gate protecon
• Industry standard packages, including Kelvin source
• Majority of devices are AEC-Q101 qualied
Flexible Design Without Changing
Gate Drive Voltage
• Replaces Si IGBTs, Si FETs, SiC MOSFETs or
Si Superjuncon devices
– SiC FET design guidelines available to support
successful upgrade
• Innovave cascode conguraon enables Si and
SiC gate voltage compability
• Integrated clamping diode protects gates from |20V|
with built-in ESD protecon
12V/0V Operaon Simplies Upgrading
Superior Gate and ESD Protecon
www.unitedsic.com
Page 2
VGS (maximum)
15V
10V
20V
5V
-5V
SJFET
Si IGBT
G3 SiC MOSFET
UnitedSiC SiC FET
-20V
-15V
-10V
0V
VGS (recommended)
15V
10V
20V
5V
0V
-5V
-10V
-20V
SJFET
G3 SiC MOSFET
Si IGBT
UnitedSiC
SiC FET