UnitedSiC Announces 6 New SiC FETs, Available in 30/40/80/150mΩ Versions
May 20th, 2021, Princeton, New Jersey: UnitedSiC, a leading manufacturer of silicon carbide (SiC) power semiconductors, continues to expand its FET portfolio with the introduction of six new 650V and 1200V options, all housed in the industry-standard D2PAK-7L surface mount package. Available in 30, 40, 80, and 150mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers, and power supplies, EV onboard chargers, and DC-DC converters.
The D2PAK-7L SiC FETs support significantly heightened switching speeds, with a Kelvin source connection improving gate drive return performance, as well as offering industry-leading thermal capabilities. Through the utilization of Ag Sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate (IMS) arrangements. In addition, they exhibit excellent creepage and clearance figures of 6.7mm and 6.1mm respectively – meaning the highest degrees of operational safety can be assured even at elevated voltages.
“Through the fast switching capabilities of these latest FETs, alongside the superior thermal performance resulting from Ag sintering, we continue to bring performance, reliability, size and layout benefits to the power designer,” states Anup Bhalla, VP Engineering at UnitedSiC.
The new D2PAK-7L devices are fully supported by UnitedSiC’s FET-Jet Calculator™. Utilizing this free online resource, engineers can assess the different operational parameters needed for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design requirements quickly and with confidence.
- +1 Like
- Add to Favorites
Recommend
- UnitedSiC Signs an Authorized Distribution Agreement with Sekorm
- UnitedSiC‘s FET-Jet Calculator Taking The Guesswork out of SiC FET Selection
- The 750V Class of UnitedSiC Gen 4 SiC FETS, Responding to Positive Feedback with More Choice
- UnitedSiC Rediscovers The Perfect Switch with SiC FETs
- UnitedSiC’s Web-based FET-Jet Calculator ——Makes Selection of A SiC FET and SiC Schottky Diode for Your Power Design
- Unitedsic Expands Schottky Diode Portfolio To Set New Benchmark in SiC Surge Current Robustness
- UnitedSiC Introduces the Industry‘s First 750V SiC FETs Based on Advanced Gen 4 Technology
- UnitedSiC‘s Gen 4 SiC FET Boasts An On-resistance per Unit Area 2~3 Times Better than for The Other SiC MOSFETs
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
