Breakthrough Performance of UnitedSiC 750V Gen 4 SiC FETs Technical Product Overview
The new series has expanded UnitedSiC FET offerings to include a 750V rating allowing additional design margin for 400V or 500V battery/bus voltage applications. Despite the increased voltage rating, Gen 4 devices employ advanced cell density to reduce the RDS(on)per unit area, delivering the industry’s lowest resistance products in all packages. In addition, high current ratings are achieved by the devices’ advanced sintered die attach technology offering improved thermal performance. Figure 1 shows the new 750V specific on-resistance versus 650V rated SiC competitors, offering substantially lower conduction losses across the full temperature range.
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Supplier and Product Introduction |
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Please see the document for details |
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TO247-4L;TO247-3L |
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English Chinese Chinese and English Japanese |
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December 2020 |
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486 KB |
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