CS2M1000170J 1700V N 沟道增强型碳化硅功率金属氧化物半导体场效应晶体管 (CS2M1000170J 1700V N-Channel Enhancement Mode Silicon Carbide Power MOSFET)
■高耐压且低导通内阻
■易于并行且易于驱动
■低寄生电感
■低阻抗封装
■单独的驱动器源引脚
■超低漏极-栅极电容
■具有低反向恢复（Qrr）的快速本征二极管
■符合 RoHS 标准
■不含卤素
●Features
■High Breakdown Voltage with Low On Resistance
■Easy to parallel and simple to drive
■Low parasitic inductance
■Low impedance package
■Separate driver source pin
■Ultra-low drain-gate capacitance
■Fast intrinsic diode with low reverse recovery (Qrr)
■RoHS Compliant
■Halogen Free
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沟道增强型碳化硅功率金属氧化物半导体场效应晶体管 、 金属氧化物半导体场效应晶体管 、 N-Channel Enhancement Mode Silicon Carbide Power MOSFET 、 Silicon Carbide Power MOSFET |
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[ 辅助电源 ][ 开关式电源供应器 ][ Auxiliary power supplies ][ Switch Mode Power Supplies ] |
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Datasheet |
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Please see the document for details |
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TO-263-7L |
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English Chinese Chinese and English Japanese |
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2.7 MB |
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