TW070J120B MOSFETs Silicon Carbide N-Channel MOS
■Chip design of 2nd generation (Built-in SiC schottky barrier diode)
■Low diode forward voltage: V-DSF=-1.35 V (typ.)
■High voltage: V-DSS=1200 V
■Low drain-source on-resistance: R-DS(ON)=70 mΩ (typ.)
■Less susceptible to malfunction due to high threshold voltage: V-th=4.2 to 5.8 V (V-DS=10 V, I-D=20 mA)
■Enhancement mode.
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Datasheet |
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Please see the document for details |
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TO-3P(N);2-16C1S |
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English Chinese Chinese and English Japanese |
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2020-08-05 |
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Rev.2.0 |
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505 KB |
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