Achieve Zero Switching Loss with SiC MOSFET
A technical report published in IEEE Transactions on Power Electronics, demonstrated that the switching loss of SiC MOSFET can be completely eliminated under some control strategies.
The study was conducted by Prof. Alex Q. Huang’s group at University of Texas at Austin and Prof. Bo Zhang’s group at University of Electronic Science and Technology of China. They analyzed the switching processes by TCAD simulation and found that the traditional method used to measure switching loss underestimates the turn-on loss and overestimates the turn-off loss due to discharge/charge current for MOSFET output capacitance (Coss) could not be directly measured.
The authors showed that zero switching loss (ZSL) is achieved when utilizing zero-voltage switching (ZVS) turn-on to recover the energy stored in output capacitance (Eoss) and using stronger gate driver and reducing parasitic capacitance to achieve zero turn-off loss (ZTL). With ZSL, the power loss caused by switching will no longer be the frequency limitation of system and this result has been verified in their experiment. In other words, the predominant factor that limits the upper boundary of switching frequency is not switching loss anymore, they are instead other frequency dependent losses such as magnetic core/winding loss, driving loss, and the minimum deadtime required to achieve ZVS.
- +1 Like
- Add to Favorites
Recommend
- 650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET
- 需要充电吗?具有开尔文源引脚的SiC MOSFET DIF120SIC053-AQ加速电动汽车充电过程
- SiC MOSFETs and SiC Schottky Diodes in TO-247-3L&4L for Sustainable Public Transportation
- Vincotech’s 70A flowPACK 1 SiC Modules Featuring Ultra-fast 900V SiC MOSFET for up to 400kHz switching frequency
- Ultra-Low On-Resistance 1200V/7mΩ SiC MOSFET N2M120007PP0 Launched by NEXIC for Renewable Energy Applications
- Littelfuse Unveils Industry’s First Asymmetrical TVS Diode Series for SiC MOSFET Gate Protection
- Littelfuse IX4351NE SiC MOSFET & IGBT Driver Wins Annual Power Product Award
- How Fast and Rugged Todays‘ SiC Schottky Rectifiers Can Be?
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.