Ultra-Low On-Resistance 1200V/7mΩ SiC MOSFET N2M120007PP0 Launched by NEXIC for Renewable Energy Applications
Recently, Chinese semiconductor company Beijing NEXIC Technology Co., Ltd. has launched a state-of-art 1200V SiC MOSFET device product (N2M120007PP0) for renewable energy applications, achieving an industry-leading ultra-low on-resistance of 7mΩ. Based on an automotive-grade manufacturing platform, the new product adopts an advanced device design and is compatible with 18V gate drive voltage. The new product aims at applications requiring high voltage, large current, and low loss, such as the traction inverters in xEVs, contributing to the evolution of the renewable energy field.
The new 1200V/7mΩ product will be delivered in a TO-247-Plus package, with a Kelvin-source connection and low thermal resistance. These significantly reduce the switching oscillation and loss and improve the thermal performance.
The new product achieves a peak operation current of over 300A. It has a positive temperature coefficient, which can facilitate users to achieve high-power design by paralleling multiple devices. Meanwhile, the device has a superior blocking capability, with an extremely low reverse leakage current (<1μA@1200V).
Static characteristics of NEXIC's device N2M120007PP0
The new product has good dynamic switching characteristics under different conditions. It has passed a series of reliability validations, including HTRB, pHTGB, nHTGB, H3TRB, and so on.
Switching wave forms under 800V/200A of NEXIC's device N2M120007PP0
In addition to TO-247-Plus, NEXIC's 1200V/7mΩ SiC MOSFET can be packaged in different types, such as customized power modules, which is convenient for various applications.
NEXIC focuses on technology innovation and product development of SiC power devices and power modules. It is committed to becoming a domestic and worldwide revolutionary leader in the power semiconductor field. NEXIC offers highly customized services from the development of devices and modules to application systems, which can help customers in various fields quickly establish their differentiated competitive advantages.
NEXIC has completed the mass production of SiC devices and modules on 650V, 1200V, and 1700V voltage platforms. The 1200V SiC MOSFET products cover on-resistance specifications from 80mΩ, 40mΩ, and 21mΩ to 7mΩ, and the 1200V/80mΩ SiC MOSFET product has passed the AEC-Q101 automotive-grade reliability qualification. The power module products are benchmarked with EasyPACK, 62mm, EconoDUAL, and other types of packages.
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