650V Enhancement-mode SiC MOSFET Provides Qoss Almost 1/10 of Advanced Silicon Super-junction MOSFET
Our enhancement-mode SiC MOSFET provides Qoss almost 1/10 of advanced silicon super-junction MOSFET and close to GaN FET. The Rdson@100C is only 10% higher than Rdson@25C, enables better Rdson@100C*Qoss figure-of-merit (FOM) better than GaN. The driving method of our SiC MOSFET is similar to that of silicon power MOSFET and the dV/dt is easily and fully controllable by adjusting external gate resistance (Rg, ext). The much higher avalanche energy (EAS) density (close to 20J/cm2) enables the EAS rating similar to advanced silicon super-junction MOSFET despite a much smaller chip size.
Fig.1
Features：
Release Date
Engineering Samples Available.
Reliable & Rugged
100% Avalanche Tested
Short-Circuit Robust
Rating
VDSS@25c=650 V
Package Type
DPAK@MSL Level-1
Ease of Use
Voltage Drive (VGS=10~18V)
Low gate leak (Ig<1nA)
Low EMI
Grade
Industrial & Consumer
Fig.2
Fig.3
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