650V SiC MPS/JBS Schottky Rectifiers Boast Ultra-low Qc and Best-in-Class VF*Qc
fastSiC's ultra-low Qc SiC MPS/JBS Schottky Rectifiers reduces switching loss (charging/discharging of diode junction capacitance) while maintaining the same conduction loss compared to competitors, which are particularly helpful for improving efficiency at light-load and/or high-frequency operations to meet the 10% load efficiency requirements of new energy standards such as Energy Star 8.0, EU CoC Tier 2 and certifications such as 80PLUS Titanium.
Features
（1）RELEASE DATE
Engineering Samples Available.
（2）RATING
VR@25C=650V
IF= 2A~10A
VF@25c=1.5V
Qc/IF= 1nC/A
（3）PACKAGE TYPE
DPAK@MSL Level-1
（4）GRADE
Industrial & Consumer
- +1 Like
- Add to Favorites
Recommend
- Achieve Zero Switching Loss with SiC MOSFET
- How Fast and Rugged Todays‘ SiC Schottky Rectifiers Can Be?
- C-V Curve Matters for Quiet Power Electronics
- Why Using Newer Si SJ MOSFETs May Not Be a Good Idea for High Frequency Switching
- 650V SiC MPS/JBS Schottky Rectifier Features Ultra-low VF and High IFSM
- What is SiC and why is SiC for power devices?
- How Much Current and Heat the Surface Mount Device (SMD) Packages Can Handle?
- A Lower Forward Voltage Drop Does Not Always Bring Benefits
This document is provided by Sekorm Platform for VIP exclusive service. The copyright is owned by Sekorm. Without authorization, any medias, websites or individual are not allowed to reprint. When authorizing the reprint, the link of www.sekorm.com must be indicated.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
