Highest Power Density for Regulated DC-DC Converters Achieved Using EPC GaN FETs and Analog Devices Controller, Efficiency Greater than 96.5 %
EL SEGUNDO, Calif.— July 2022 — EPC announces the availability of the EPC9158, a dual output synchronous buck converter reference design board operating at 500kHz switching frequency that converts an input voltage of 48V - 54V to a regulated 12V output and delivers up to 25A per phase or 50A total continuous current. The combination of the new Analog LTC7890 synchronous GaN buck controller with ultra-efficient GaN FETs from EPC enables a highly efficient solution in a small footprint for high power density applications. The solution achieves 96.5% efficiency at 48V to 12V and 50A continuous current.
The high-power density makes this solution ideal for computing, industrial, consumer, and telecom power systems requiring small size and high efficiency. eGaN® FETs provide fast switching, high efficiency, and small size that can meet the stringent power density requirements of these leading-edge applications.
The EPC9158 reference design uses the EPC2218 100V enhancement-mode GaN FET and the LTC7890 two-phase analog buck controller with integrated GaN drivers.
The LTC7890 100 V low Iq, the dual, 2-phase synchronous step-down controller is fully optimized to drive EPC GaN FETs and integrates a half-bridge driver and smart bootstrap diode. It offers optimized near-zero deadtime or programmable deadtime and programmable switching frequencies up to 3 MHz. The quiescent current of 5 uA (VIN = 48V, VOUT = 5V, CH1 only) enables very low standby power consumption and excellent light load efficiency.
The EPC2218 is a 100V GaN FET with 3.2mOhm max RDS(on), 10.5nC QG, 1.5nC QGD, 46nC QOSS, and zero QRR in a super small 3.5mm x 1.95mm footprint and can deliver up to 60A continuous current and 231A peak current. The excellent dynamic parameters allow very small switching losses at 500kHz switching frequency.
The efficiency of the EPC9158 is greater than 96.5% for 12V output and 48V input. In addition to light load operating mode and adjustable dead time, the board offers UVLO, Over-current protection, and power good output.
Alex Lidow, CEO of EPC commented, “GaN FETs are required to achieve the maxim power density for DC-DC converters. We are delighted to work with Analog Devices to combine the benefits of their advanced controllers with the performance of GaN to provide customers with the highest power density and low component count solution that increases the efficiency, increases power density, and reduces system cost.”
“The Analog Device’s LTC7890 is designed to fully exploit the high performance of EPC’s eGaN FETs for high power density solutions,” said Tae Han, Sr. Product Marketing Manager at Analog Devices, “The LTC7890 offers higher switching frequency and optimized deadtime that competes well above the current solution in the market while operating in very lower power consumption. With these new controllers, customers can take advantage of the very fast switching of GaN for the highest power density.”
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor DATASHEET
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor DATA SHEET
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2218 – Enhancement Mode Power Transistor
- 【Datasheet】EPC2218A – Automotive 80 V (D-S) Enhancement Mode Power Transistor
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
- 【Datasheet】Enhancement-Mode Gallium Nitride Technology
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