EPC2218 – Enhancement Mode Power Transistor

2020-11-23
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate
Benefits:
● Ultra High Efficiency
● No Reverse Recovery
● Ultra Low QG
● Small Footprint

EPC

EPC2218

More

Part#

Enhancement Mode Power Transistor

More

DC-DC Converters ]BLDC Motor Drives ]Sync Rectification for AC/DC ]Sync Rectification for DC-DC ]Point of Load Converters ]USB-C ]Lidar ]Class D Audio ]LED Lighting ]E-Mobility ]

More

Datasheet

More

More

Please see the document for details

More

More

English Chinese Chinese and English Japanese

October, 2020

1.3 MB

- The full preview is over. If you want to read the whole 6 page document,please Sign in/Register -
  • +1 Like
  • Add to Favorites

Recommend

All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.

Contact Us

Email: