BASiC Semiconductor Launched Pcore™2 - Automotive Half-bridge SiC MOSFET Modules for Large-scale Vehicle Applications
The Automotive Half-bridge SiC MOSFET Module Pcore™2 is developed and launched by BASiC semiconductor, especially as a power device in the main traction drives, it features high power density and long service life in large-scale vehicle applications, such as electric cars.
Part Number
The product utilizes a standard ED3 package, and adopts a double-sided pressure-assisted silver sintering connection process, high-density copper wire bonding technology, and high-performance AMB-Si3N4 ceramic substrate, and can be adapted to a standard CAV application-type package. This product effectively reduces the temperature rise and power loss of power devices in the main motor drive and fuel cell energy management systems in electric vehicles.
Pcore™2 family features low switching losses, high-speed switching, reduced temperature dependence, high reliability, and operating junction temperatures up to 175℃. Thanks to the same package size as the conventional silicon-based power module, Pcore™2 can replace IGBT modules of the same package to a certain extent, thus helping customers effectively shorten the product development cycle and improve the efficiency of the design process.
Product Features
Trench-type, low RDS(on) SiC MOSFET chip
Double-sided pressure-assisted silver sintering
High-performance Si3N4AMB ceramic substrate
Nanosilver dielectric layer with high thermal conductivity
High-density copper wire bonding technology
Die Top System (DTS) technology
Copper base plate direct-cooling structure
Adapted to standard CAV application-type package
Advantages
Devices service life extended by 5 times
Low switching loss
Low on-resistance
High-speed switching
Reduced temperature dependence
Operating junction temperature up to 175℃
High reliability
Applications
Motor drive in electric vehicles
Fuel cell power systems
Electric propulsion systems in mobile platforms
Solar inverter and energy storage systems
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