Automotive-grade Full SiC Power Module Reported by China‘s CCTV News
On January 21, in an interview with a CCTV News reporter, Dr. Wang Zhihan, Chairman of BASiC semiconductor, shared his experience in leading the team to overcome key technological bottlenecks for the third generation of semiconductors in terms of R&D innovation, product design, and talent cultivation.
In the interview, Dr. Wang Zhihan showed the automotive-grade full SiC Power Module independently developed by BASiC Semiconductor. The product is to be massively produced for motor controllers on new energy vehicles (NEVs). With eight SiC MOSFET chips, the product features performance advantages including high power, high density, high reliability, low internal parasitic inductance within the module, and low thermal resistance. BASiC Semiconductor has allocated substantial resources into the NEV field, which is expected to be one of the most important SiC markets in the future.
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