GPT Silicon carbide device fabrication and applicationsolution provider in China
GPT is a SiC power devices manufacturer in China which established in 2011. With headquarter in Beijing, GPT has two completed 4 / 6-inch SiC power devices production lines with IDM mode. The company's products have been widely used in PC power supply, PV inverter, charge module, OBC, DC-DC and other fields. GPT quality system certification: ISO / IATF 16949 / RoHS / Reach / UL / DNV · GL and USCG / AEC-Q101, etc. The quality of GPT products can fully match various clients' demand.
●GPT's SiC devices cover 650V / 1200V / 1700V / 3300V (1A-100A).
● Silicon carbide devices have been regarded as the third generation semiconductor devices after Silicon and GaAs semiconductor materials with its low power loss and stable high temperature performance. Silicon carbide power devices can be widely used in the field of power control and management. These devices outperform in power supplies for higher efficiency, smaller size and better operating frequency.
●Silicon carbide devices are mainly used in :
■ Power Factor Correction
■ DC / AC converters for solar / wind power
■ Industrial Motor Drivers
■ Charge Block for Electric Cars
■ Output Rectification
■ Electrical House Hold Appliances
● Quality Certification : ISO9001 , IATF 16949 / ROHS / Reach / UL / DNV GLUSCG / ACE-Q101 , etc .
● Advantages : It can replace silicon diode , reduce the requirement of heat dissipation in system with low switching loss and high efficiency .
● Working Temperature TJ : -55℃-200℃ ( Plastic Package -55℃-175℃)
● Package : Provide TO220 , T0220 full package , TO220 internal insulation , to247-21to247-31 , TO247-41 TO252 , T0263-2 , TO263-7 , DFN8 8 , SOD123 and other plastic Package GPT can also provide customized HT package for clients.
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