BASiC Semiconductor Launched Pcore™6 – Automotive 3-Phase Full-bridge SiC MOSFET Module for New Energy Vehicles
The automotive 3-phase Full-bridge SiC MOSFET Module Pcore™6 is designed and launched by BASiC semiconductor based on the high-performance and high-efficiency requirements of power modules for core traction drivers from automobile manufacturers.
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The product utilizes a standard package in an advanced press-type silver sintering connection process inside the power module with high-density copper wire bonding technology. The Pcore™6 series modules manufactured can effectively curb the temperature rise of the power device when being used in the main drive electronic controller and fuel cell energy management systems in electric vehicles, thereby increasing the output current by more than 10% under the same chip temperature.
Product Features
Trench-type, low RDS(on) SiC MOSFET chip
Double-sided press-type silver sintering
Nanosilver dielectric layer with high thermal conductivity
High-density copper wire bonding technology
Die Top System (DTS) technology
Enhanced PinFin heatsinking structure
Fast dynamic response
Advantages
Parts lifetime extended by 5 times
System output capability improved by 10%
High power density
High blocking voltage
Low on-state resistance
Low switching loss
High reliability
Applications
New Energy Vehicles
Power drive systems for electric vehicles, railway, aircraft, submarine vehicles, etc.
Fuel cell power systems
Electric propulsion systems for mobile devices
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