EPC2022 – Enhancement Mode Power Transistor

2023-08-15
●Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
●EPC2022 eGaN® FETs are supplied only in passivated die form with solder bumps.
■High Speed DC-DC Conversion
■Motor Drive
■Industrial Automation
■Synchronous Rectification
■Inrush Protection
■Class-D Audio

EPC

EPC2022

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Part#

Enhancement Mode Power TransistoreGaN® FET

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High Speed DC-DC Conversion ]Motor Drive ]Industrial Automation ]Synchronous Rectification ]Inrush Protection ]Class-D Audio ]

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Datasheet

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June 2023

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