EPC2022 – Enhancement Mode Power Transistor

2020-10-09
Gallium Nitride's exceptionally high electron mobility and low temperature coefficient allows very low R-DS(on), while its lateral device structure and majority carrier diode provide exceptionally low Q-G and zero Q-RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
EPC2022 eGaN® FETs are supplied only inpassivated die form with solder bumps.
Die Size: 6.05 mm x 2.3 mm

EPC

EPC2022

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Part#

Enhancement Mode Power Transistor

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High Speed DC-DC Conversion ]Motor Drive ]Industrial Automation ]Synchronous Rectification ]Inrush Protection ]Class-D Audio ]

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June, 2020

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