Si7230DN_RC Vishay Siliconix R-C Thermal Model Parameters
The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET".
When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.
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Datasheet |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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23-Jul-07 |
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Revision: 23-Jul-07 |
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69202 |
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96 KB |
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