IRL540, SiHL540 Vishay Siliconix Vishay Siliconix
●FEATURES
■Dynamic dV/dt Rating
■Repetitive Avalanche Rated
■Logic-Level Gate Drive
■R-DS(on) Specified at V-GS = 4 V and 5 V
■175 °C Operating Temperature
■Fast Switching
■Ease of Paralleling
■Compliant to RoHS Directive 2002/95/EC
●DESCRIPTION
■Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
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IRL540 、 SiHL540 、 SiHL540-E3 、 IRL540PbF |
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Datasheet |
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Please see the document for details |
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TO-220AB;TO-220-1 |
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English Chinese Chinese and English Japanese |
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21-Mar-11 |
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Rev. B, |
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91300 |
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1.3 MB |
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