HM5N60F 600V N-Channel MOSFET
■Low Intrinsic Capacitances.
■Excellent Switching Characteristics.
■Extended Safe Operating Area.
■Unrivalled Gate Charge :Qg=16nC (Typ.).
■BVDSS=600V,I D=5A
■RDS (on) : 1.9Ω (Max) @VG =10V
■100% Avalanche Tested
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Datasheet |
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Please see the document for details |
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TO-220F |
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English Chinese Chinese and English Japanese |
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2015/8/14 |
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2.7 MB |
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