HM5N60Y HM5N60D 600V N-Channel MOSFET
■Low Intrinsic Capacitances.
■Excellent Switching Characteristics.
■Extended Safe Operating Area.
■Unrivalled Gate Charge :Qg=15nC (Typ.).
■BVDSS=6 0V,ID=4.5A
■RDS(on) : 2.5 Ω (Max) @VG=10V
■100% Avalanche Tested
|
|
|
|
Datasheet |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
TO ‐251;TO ‐252 |
|
|
English Chinese Chinese and English Japanese |
|
|
2017/7/7 |
|
|
|
|
|
|
|
|
5 MB |
- +1 Like
- Add to Favorites
Recommend
- SLKOR High-voltage MOSFET SL15N60CF: Excellent Performance and Wide Applications
- Five Key Points For Successful Design Of Led Driver Power
- The Differences between MOS Tube and IGBT Tube
- Vincotech‘s fastPACK 0 MOS and fastPACK 1 MOS Modules Featuring Cost-effective H-bridge Topology with MOSFETs
- MOS Switch Tube Selection and Principle Application
- What is the Difference between MOS tube and IGBT?
- Understand the N and P MOS Operation of MOSFETs
- SOT-23 P-channel MOS BSS84 : Cost Effective Solutions for Low-voltage Applications Requiring a Low-current High-side Switch
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
