HM5N60/HM5N60F 600V N-Channel MOSFET
■This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.
■This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
●Features:
■4.5A, 600V, R-DS(on)=2.50Ω @V-GS=10 V
■Low gate charge ( typical 16nC)
■High ruggedness
■Fast switching
■100% avalanche tested
■Improved dv/dt capability
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[ high efficiency switched mode power supplies ][ active power factor correction based on half bridge topology ] |
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Datasheet |
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Please see the document for details |
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TO-220;TO-220F |
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English Chinese Chinese and English Japanese |
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2021/03/01 |
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383 KB |
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