5N60/5N60F 600V N-Channel MOSFET
■This Power MOSFET is produced using advanced planar stripe, DMOS technology.This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics, such as fast switching time,low on resistance.low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at AC adaptors, on the battery charger and SMPS
●Features
■4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V
■Low gate charge ( typical 17nC)
■Fast switching
■100% avalanche tested
■Improved dv/dt capability
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Datasheet |
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Please see the document for details |
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TO-220;220F |
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English Chinese Chinese and English Japanese |
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2011/12/8 |
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2.1 MB |
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