SiC POWER SEMICONDUCTOR DEVICES 碳化硅功率器件
深圳基本半导体有限公司是中国第三代半导体行业领军企业,专业从事碳化硅功率器件的研发与产业化。公司总部位于深圳,在北京、上海、南京、无锡以及日本名古屋设有研发中心和制造基地。公司拥有一支国际化的研发团队,核心成员包括来自清华大学、中国科学院、英国剑桥大学、德国亚琛工业大学、瑞典皇家理工学院、瑞士洛桑联邦理工学院等国内外知名高校及研究机构的十多位博士。
基本半导体掌握国际领先的碳化硅核心技术,研发覆盖碳化硅功率器件的材料制备、芯片设计、封装测试、驱动应用等全产业链,推出通过 AEC-Q101 可靠性测试的碳化硅肖特基二极管、通过工业级可靠性测试的 1200V 碳化硅 MOSFET 以及汽车级全碳化硅功率模块等系列产品,性能达到国际先进水平,产品广泛应用于新能源、电动汽车、智能电网、轨道交通、工业控制等领域。
Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide-band Gap semiconductor industry in China, is committed to the R&D and industrialization of SiC power devices, and set up R&D centers in Nanshan Shenzhen, Pingshan Shenzhen, Yizhuang Beijing, Pukou Nanjing, Xinwu Wuxi and Nagoya Japan. BASiC has established a world-class R&D team, the core members include more than 10 PhDs from University of Cambridge, Tsinghua University, KTH Royal Institute of Technology, Chinese Academy of Sciences and other well-known universities and research institutions at home and abroad.
BASiC master the global advanced core technology of SiC. The R&D fields cover the whole industrial chain of SiC power devices, such as epitaxial preparation, chip design, wafer manufacturing, packaging test and driver circuit application etc. Successively launched series of products such as full-current and full voltage range SiC schottky diode, 1200V SiC MOSFET which has passed the reliability test of industrial level and automotive Full-SiC power modules etc. The products have reached the international advanced level, which are widely used in new energy generation, EV, railway traction, smart grids, defense industry and other fields.
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