B1D02065K SiC Schottky Diode
⚫No reverse recovery current
⚫Temperature independent switching
⚫Positive temperature coefficient on VF
⚫Excellent surge current capability
⚫Low capacitive charge
⚫Essentially no switching losses
⚫System efficiency improvement over Si diodes
⚫Increased power density
⚫Enabling higher switching frequency
⚫Reduction of heat sink requirements
⚫System cost savings due to smaller magnetics
⚫Reduced EMI
[ Switch mode power supplies (SMPS) ][ Uninterruptible power supplies ][ Motor drivers ][ Power factor correction ] |
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Datasheet |
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Please see the document for details |
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TO-220-2 |
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English Chinese Chinese and English Japanese |
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2020-07-06 |
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Rev. 1.0 |
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931 KB |
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