SiC POWER
SEMICONDUCTOR
DEVICES
碳化硅功率器件
2022/03/07
+86-755-22670439 www.basicsemi.cominfo@basicsemi.com
深圳基本半导体有限公司 SHENZHEN BASiC SEMICONDUCTOR LTD.
广东省深圳市南山区高新园区高新南七道数字技术园国家工程实验室大楼B座11层
11F, Block B, National Engineering Lab Building，Digital Technology Park, Gaoxin South 7th Road,
District of High-Tech Industrial Park, Nanshan District, Shenzhen，Guangdong Province
绿色能源芯片 驱动科技未来
Green Energy Chips Drive Technology Future
目录
CONTENTS
01
P02
关于我们
ABOUT US
P04
碳化硅功率器件工程实验室
SiC POWER DEVICE ENGINEERING LAB
P06
碳化硅肖特基二极管
碳化硅功率器件
SiC POWER SEMICONDUCTOR DEVICES
SiC Schottky Diodes
DFN8*8碳化硅肖特基二极管
DFN8*8 SiC Schottky Diodes
碳化硅MOSFET
SiC MOSFET
碳化硅MOSFET驱动
SiC MOSFET Driver Core
裸片和晶圆服务
Die & wafer services
汽车级全碳化硅功率模块
Automotive Full-SiC Power Modules
Pcore
TM
6 - 汽车级全碳化硅
三相全桥MOSFET模块
Pcore
TM
6 - Automotive 3-phase
Full-bridge SiC MOSFET Modules
Pcell
TM
- 汽车级全碳化硅
塑封单面散热半桥MOSFET模块
Pcell
TM
- Automotive Single-sided Cooling
Half-bridge SiC MOSFET Modules
Pcore
TM
2 - 汽车级全碳化硅
半桥MOSFET模��
Pcore
TM
2 - Automotive Half-bridge
SiC MOSFET Modules
内绝缘TO-220封装
碳化硅肖特基二极管
TO-220 Isolated SiC Schottky Diodes
P20
工艺制造服务
PROCESS MANUFACTURING SERVICES
碳化硅器件定制
SiC device customization
P23
命名规则
NAMING RULE
器件命名规则
Device naming rule
裸芯片命名规则
Bare die naming rule
WWW.BASICSEMI.COM
02 03
关于我们
ABOUT US
WWW.BASICSEMI.COM
BASiC
基本半导体
深圳基本半导体有限公司是中国第三代半导体行业领军企业，专业从事碳化硅功率器件的
研发与产业化。公司总部位于深圳，在北京、上海、南京、无锡以及日本名古屋设有研发中心和制
造基地。公司拥有一支国际化的研发团队，核心成员包括来自清华大学、中国科学院、英国剑桥
大学、德国亚琛工业大学、瑞典皇家理工学院、��士洛桑联邦理工学院等国内外知名高校及研究
机构的十多位博士。
基本半导体掌握国际领先的碳化硅核心技术，研发覆盖碳化硅功率器件的材料制备、芯片
设计、封装测试、驱动应用等全产业链，推出通过 AEC-Q101 可靠性测试的碳化硅肖特基二极
管、通过工业级可靠性测试的 1200V 碳化硅 MOSFET 以及汽车级全碳化硅功率模块等系列产
品，性能达到国际先进水平，产品广泛应用于新能源、电动汽车、智能电网、轨道交通、工业控制
等领域。
基本半导体与深圳清华大学研究院共建第三代半导体材料与器件研发中心，是国家 5G 中
高频器件创新中心股东单位之一，获批中国科协产学研融合技术创���服务体系第三代半导体协
同创新中心、广东省第三代半导体碳化硅功率器件工程技术研究中心。公司累计获得专利授权
百余项，荣获中国专利优秀奖、深圳市专利奖、2020“科创中国”新锐企业、“中国芯”优秀技术创
新产品奖、中国创新创业大赛专业赛一等奖等荣誉。
Shenzhen BASiC Semiconductor LTD., the leading enterprise of Wide-band Gap
semiconductor industry in China, is committed to the R&D and industrialization of SiC
power devices, and set up R&D centers in Nanshan Shenzhen, Pingshan Shenzhen,
Yizhuang Beijing, Pukou Nanjing, Xinwu Wuxi and Nagoya Japan. BASiC has established a
world-class R&D team, the core members include more than 10 PhDs from University of
Cambridge, Tsinghua University, KTH Royal Institute of Technology, Chinese Academy of
Sciences and other well-known universities and research institutions at home and abroad.
BASiC master the global advanced core technology of SiC. The R&D fields cover the whole
industrial chain of SiC power devices, such as epitaxial preparation, chip design, wafer
manufacturing, packaging test and driver circuit application etc. Successively launched
series of products such as full-current and full voltage range SiC schottky diode, 1200V SiC
MOSFET which has passed the reliability test of industrial level and automotive Full-SiC
power modules etc. The products have reached the international advanced level, which
are widely used in new energy generation, EV, railway traction, smart grids, defense
industry and other fields.
BASiC, one of the initiators of National Innovation Center for Advanced Radio Frequency
Devices, has been approved as CAST cross-sector partnership between industry and
academia integrated technology innovation service system of Wide-band Gap
semiconductor synergetic innovation center, and jointly established the material and
devices R&D center of Wide-band Gap Semiconductors with Research Institute of Tsinghua
University in Shenzhen. BASiC was also awarded with the honor of China IC outstanding
technology innovation product, and won the first prize in China innovation and
entrepreneurship competition.