Improve DC-DC Flyback Converter Efficiency Using eGaN FETs
●DC-DC converter designers can achieve low cost at low power densities by using flyback converters and enhancement mode gallium nitride transistors. To evaluate the performance of eGaN FETs in a flyback converter, two different converter designs were created and compared to MOSFET equivalent versions of the same design. Both converters were targeted at Power over Ethernet (PoE) low power (13W) Powered Device (PD) applications. The first of these two converters was aimed at small size; the second design was aimed at high efficiency.
|
|
|
|
Technical Documentation |
|
|
|
|
Please see the document for details |
|
|
|
|
|
|
|
|
|
|
|
English Chinese Chinese and English Japanese |
|
|
2017/06/16 |
|
|
|
|
|
WP003 |
|
|
444 KB |
- +1 Like
- Add to Favorites
Recommend
- EPC Share Some Myths about Gallium Nitride Semiconductors
- CXW Launches a 33W Single C Ultra MINI Gallium Nitride Solution, with CX2006 to Assist!
- How Does Gallium Nitride Fit into the Next Generation of High Performance Electronics
- GaN Switching Frequency: Using Gallium Nitride Technology in Next-Generation High-Frequency Circuits
- The Difference between Transistor and Field-effect Transistor
- Gallium Nitride Audio Amplifiers: The Latest Technology in Audio Power Amplification
- Sekorm Became an Authorized Distributor of EPC(Efficient Power Conversion), Which Brings GaN FET Products
- How to Use the GaN FET Thermal Calculator to Boost Reliability and Shorten Time-To-Market in Power Electronics System Designs
All reproduced articles on this site are for the purpose of conveying more information and clearly indicate the source. If media or individuals who do not want to be reproduced can contact us, which will be deleted.
Integrated Circuits
Discrete Components
Connectors & Structural Components
Assembly UnitModules & Accessories
Power Supplies & Power Modules
Electronic Materials
Instrumentation & Test Kit
Electrical Tools & Materials
Mechatronics
Processing & Customization
