Enhancement Mode Gallium Nitride (eGaNTM) FET Characteristics under Long Term Stress
Enhancement mode HEMT transistors built with Gallium-Nitride-on-silicon (eGaN) have been in the commercial marketplace since 2009 as a replacement for silicon power MOSFETs. Superior conductivity and switching characteristics allow designers to greatly reduce system power losses, size, weight, and cost. Military and space applications could benefit from using eGaN FETs, but the parts need to operate reliably under harsh environmental conditions. In this paper we present results demonstrating the stability of these devices at temperature and under radiation exposure.
The basic requirements for power semiconductors are efficiency, reliability, controllability, and cost effectiveness. Recent breakthroughs by Efficient Power Conversion Corporation (EPC) in processing gallium nitride have produced enhancement mode devices (eGaNTM) with conductivity and switching speeds much higher than Si power FETs. These improvements enable power converters with higher efficiency and switching frequency, as well as greater input voltage range, leading to simpler, smaller power systems. Ranging in voltage from 40 V to 200 V, and on-state resistance from 4 mΩ to 100mΩ, this new class of devices has also proved very capable in a high radiation environment.
This paper is divided into four sections. The first discusses the basic eGaN FET structure. The second section shows the result of heavy ion testing with linear energy transfers (LETs) ranging from 28.8 to 87.2 MeV*cm2/mg. The third section gives pre-and post results for total dose testing up to 500 kRad (Si). The final section discusses the successful multi-thousand hour stress testing under a variety of bias and temperature conditions.
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EPC1005 、 EPC1001 、 EPC1007 、 EPC1009 、 EPC1010 、 EPC1011 、 EPC1012 、 EPC1013 、 EPC1014 、 EPC1015 |
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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March 24, 2011 |
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283 KB |
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