EPC GaN Transistor Application Readiness: Phase Three Testing
●Efficient Power Conversion Corporation’s (EPC) enhancement mode Gallium Nitride (eGaN™) power transistors,although similar to standard power MOSFETs,deliver performance unattainable by silicon-based devices. EPC power transistors offer standard power converter topologies added performance and improved efficiency while maintaining the simplicity of older designs. EPC’s risk-reduction results to date include the placement of over 810 devices,at their maximum operating ratings,in a wide variety of stress tests.Over 960,000 total device hours of reliability testing validates the readiness of eGaN transistors to supplant their silicon counter-parts for power switching applications.
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/05/05 |
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625 KB |
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