EPC GaN® FETs Application Readiness: Phase Five Testing RELIABILITY REPORT
●Efficient Power Conversion Corporation’s enhancement mode Gallium Nitride (eGaN®) FETs, although similar to standard power MOSFETs, deliver performance unattainable by silicon-based devices [1]. EPC eGaN FETs enable power converters to achieve higher efficiency while maintaining the simplicity of older designs [2,3,4]. Joining the first generation eGaN FETs and the second generation 40 V and 100 V product, EPC introduced its second generation 200 V product family [5] in 2011.All second generation products are lead-free,halogen free,and RoHS compliant.EPC’s risk-reduction results to date include the testing of more than 1800 devices in a wide variety of stress conditions.Over 1.7 million accumulated device hours of reliability testing validate the readiness of eGaN FETs to supplant their aging silicon cousins for most commercial power switching applications.This application note focuses on the sec-ond generation 200 V device reliability test results, as well as other new tests completed since the Phase Four Report [13].The statistical failure rate is also calculated based on the stress tests completed.
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M705-GRN360-K-V 、 SAC305 、 M705-GRN360 、 FP4549Si 、 SMC375X7 、 EPC2010 、 EPC2012 、 NC257-2 、 EPC1001 、 EPC1014 、 EPC1012 、 EPC1010 、 EPC1015 、 EPC9001 、 EPC9002 、 EPC2015 、 EPC2001 、 T300 |
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Test Report |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2019/08/29 |
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734 KB |
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