EPC GaN Transistor Application Readiness: Phase One Testing RELIABILITY REPORT
●Efficient Power Conversion Corporation’s (EPC) enhancement mode Gallium Nitride (GaN) power transistors offer performance well beyond the realm of silicon-based MOSFETs. Standard power converter topologies can greatly benefit from the added performance and realize improved efficiency while maintaining the simplicity of older designs.
●Although similar to standard power MOSFETs,enhancement mode GaN transistors are a relatively new technology.Operating life information is not yet at the level available to users of silicon power MOSFETs.EPC’s risk-reduction results to date include the placement of over 380 devices,at their maximum operating ratings on a wide variety of stress tests.Over 275,000 total device hours support our product’s readiness for commercial use.The conversion of power MOSFET-based systems can begin with acceptable levels of risk.
●In this paper,the suitability for reliable and commercial use of EPC technology will be addressed in detail.
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EPC 1014 、 EPC1015 、 EPC1001 、 EPC1007 、 EPC1014 、 EPC1010 、 EPC1012 、 EPC1009 、 EPC1005 、 EPC1013 、 EPC1011 |
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Test Report |
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Please see the document for details |
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LGA |
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English Chinese Chinese and English Japanese |
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2019/08/30 |
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1.4 MB |
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