Thermal Performance of EPC eGaN® FETs

2021-06-17
Thermal resistance is a major factor in determining the capabilities of discrete power devices. From a device’s thermal characteristics both the maximum power dissipation and maximum current can be derived for user applications. While the thermal performance of traditional silicon MOSFETs is well understood, measuring the thermal performance of eGaN® FETs requires some further explanation. This Applications Note investigates the testing method and results of thermal resistance measurements on eGaN FETs.

EPC

EPC1014EPC1015EPC1009EPC1005EPC1007EPC1001EPC1013EPC1011EPC1012EPC1010

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EPC eGaN® FETs

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Application note & Design Guide

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2019

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