ZN65C1R120L 650V, 120mΩ typ., GaN FET in DFN 8x8 Package Preliminary Datasheet
●The ZN65C1R120L is a 650V, 120 mΩ Gallium Nitride (GaN) FET in an 8 x 8 DFN package. It is a normally-off device that combines Ziener’s latest high-voltage GaN HEMT with a low voltage silicon MOSFET to offer superior reliability and performance.
■Features and Benefits:
●JEDEC-qualified GaN technology
●Dynamic RDS(on)eff production tested
●Wide gate safety margin
●Capable of reverse conduction
●Low gate charge
●RoHS compliant and Halogen-free packaging
●Achieves increased efficiency in both hard- and soft- switched circuits
◆Increased power density
◆Reduced system size and weight
◆Overall lower system cost
●Easy to drive with commonly-used gate drivers
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[ Fast charger ][ Telecom power ][ Data center ][ Lighting ] |
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Datasheet |
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Please see the document for details |
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DFN |
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English Chinese Chinese and English Japanese |
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Nov. 1, 2022 |
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Rev 1.0 |
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1.1 MB |
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