GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET Product data sheet
●General description:
■The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance. AEC-Q101 qualified.
●Features and benefits:
■Ultra-low reverse recovery charge
■Simple gate drive (0 V to +10 V or 12 V)
■Robust gate oxide (±20 V capability)
■High gate threshold voltage (+4 V) for very good gate bounce immunity
■Very low source-drain voltage in reverse conduction mode
■Transient over-voltage capability (800 V)
■AEC-Q101 qualified
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[ Hard switching converters ][ soft switching converters ][ industrial ][ datacom power ][ Bridgeless totempole PFC ][ PV inverters ][ UPS inverters ][ Servo motor drives ] |
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Datasheet |
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Please see the document for details |
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TO-247;SOT429 |
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English Chinese Chinese and English Japanese |
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15 November 2019 |
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499 KB |
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