Gallium Nitride Transistor Packaging Advances and Thermal Modeling
●Introduction
■Gallium nitride-based transistor replacements for power MOSFETs have been widely available for over three years [1]. In addition to superior conductivity, these new-generation devices switch ten times faster than their aged silicon ancestors. The superior characteristics enable not only many new applications but also create more stringent requirements for packaging and thermal management. In this article, we discuss the advantages and thermal challenges of using the high performance enhancement mode eGaN® FETs in Land Grid Array (LGA) packages in high power density systems.
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Technical Documentation |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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September 2012 |
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731 KB |
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