TPH3207WS 650V GaN FET in TO-247 (source tab)
■The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.
●Features
■JEDEC qualified GaN technology
■Dynamic RDS(on)eff production tested
■Robust design, defined by
▲Intrinsic lifetime tests
▲Wide gate safety margin
▲Transient over-voltage capability
■Very low QRR
■Reduced crossover loss
■RoHS compliant and Halogen-free packaging
●Benefits
■Enables AC-DC bridgeless totem-pole PFC designs
▲Increased power density
▲Reduced system size and weight
▲Overall lower system cost
■Achieves increased efficiency in both hard-and soft-switched circuits
■Easy to drive with commonly-used gate drivers
■GSD pin layout improves high speed design
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[ Datacom ][ Broad industrial ][ PV inverter ][ Servo motor ] |
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Datasheet |
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Please see the document for details |
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TO-247 |
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English Chinese Chinese and English Japanese |
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7/16/2018 |
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Version 13 |
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tph3207w.13 |
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1.3 MB |
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