July 16, 2018 © 2018 Transphorm Inc. Subject to change without notice.
tph3207w.13 1
TPH3207WS
Not recommended for new
designs—see TP65H035WS
650V GaN FET in TO-247 (source tab)
Features
JEDEC qualified GaN technology
Dynamic R
DS(on)eff
production tested
Robust design, defined by
— Intrinsic lifetime tests
— Wide gate safety margin
— Transient over-voltage capability
Very low Q
RR
Reduced crossover loss
RoHS compliant and Halogen-free packaging
Benefits
Enables AC-DC bridgeless totem-pole PFC designs
— Increased power density
— Reduced system size and weight
— Overall lower system cost
Achieves increased efficiency in both hard- and soft-
switched circuits
Easy to drive with commonly-used gate drivers
GSD pin layout improves high speed design
Applications
Datacom
Broad industrial
PV inverter
Servo motor
Description
The TPH3207WS 650V, 35mΩ Gallium Nitride (GaN) FET is
a normally-off device. It combines state-of-the-art high
voltage GaN HEMT and low voltage silicon MOSFET
technologies—offering superior reliability and performance.
Transphorm GaN offers improved efficiency over silicon,
through lower gate charge, lower crossover loss, and smaller
reverse recovery charge.
Related Literature
AN0009: Recommended External Circuitry for GaN FETs
AN0003: Printed Circuit Board Layout and Probing
AN0010: Paralleling GaN FETs
S
G
D
S
TPH3207WS
TO-247
(top view)
Ordering Information
Part Number Package
Package
Configuration
TPH3207WS 3 lead TO-247 Source
Cascode Device Structure Cascode Schematic Symbol
Key Specifications
V
DSS
(V) 650
V
(TR)DSS
(V) 800
R
DS(on)eff
(mΩ) max* 41
Q
RR
(nC) typ 175
Q
G
(nC) typ 28
* Dynamic on-resistance; see Figures 19 and 20
Common Topology Power Recommendations
CCM bridgeless totem-pole* 3821W max
Hard-switched inverter** 4616W max
Conditions: F
SW
=45kHz; T
J
=115°C; T
HEATSINK
=90°C; insulator between
device and heatsink (6 mil Sil-Pad® K-10); power de-rates at lower
voltages with constant current
*
**
V
IN
=230V
AC
; V
OUT
=390V
DC
V
IN
=380V
DC
; V
OUT
=240V
AC
July 18, 2018 transphormusa.com
tph3207w.13 2
TPH3207WS
Thermal Resistance
Symbol Parameter Typical Unit
R
ΘJC
Junction-to-case 0.7 °C/W
R
ΘJA
Junction-to-ambient 40 °C/W
Absolute Maximum Ratings (T
c
=25°C unless otherwise stated.)
Symbol Parameter Limit Value Unit
V
DSS
Drain to source voltage (T
J
= -55°C to 150°C) 650
V
V
(TR)DSS
Transient drain to source voltage
a
800
V
GSS
Gate to source voltage ±18
P
D
Maximum power dissipation @T
C
=25°C 178 W
I
D
Continuous drain current @T
C
=25°C
b
50 A
Continuous drain current @T
C
=100°C
b
32 A
I
DM
Pulsed drain current (pulse width: 10µs) 240 A
(di/dt)
RDMC
Reverse diode di/dt, repetitive
c
1700 A/µs
(di/dt)
RDMT
Reverse diode di/dt, transient
d
3600 A/µs
T
C
Operating temperature
Case -55 to +150 °C
T
J
Junction -55 to +150 °C
T
S
Storage temperature -55 to +150 °C
T
SOLD
Soldering peak temperature
e
260 °C
Notes:
a. In off-state, spike duty cycle D<0.01, spike duration <1µs
b. For increased stability at high current operation, see Circuit Implementation on page 3
c. Continuous switching operation
d. ≤300 pulses per second for a total duration ≤20 minutes
e. For 10 sec., 1.6mm from the case