Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications
The ultra high speed switching capabilities of gallium nitride transistors have now been taken to the next level with the introduction of the third generation of eGaN FETs, the EPC8000 series, with switching transition speeds in the sub nano-second range. These devices are capable of hard switching applications above 10 MHz. Figure 1 shows a pho-to image of the new EPC8000 device mounting (bump) side.
In this application note we present the new EPC8000 series devices and highlight some of the key features that make this transistor family suit-able for high frequency applications. That will be followed by two application examples, a 10 MHz envelope tracking converter and a 6.78 MHz class D wireless power transfer system. In conclusion, small signal RF characteristics will also be provided.
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Application note & Design Guide |
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Please see the document for details |
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English Chinese Chinese and English Japanese |
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2017/06/16 |
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AN015 |
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1.9 MB |
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