High Power Fully Regulated Eighth High Power Fully Regulated Eighth-brick DC-DC Converter with GaN FETs
●Abstract: The recently introduced family of fourth generation eGaN® FET power devices provides significantimprovements in electrical performance figures of merit,reductions in device on-resistance, and larger die, enabling improved performance in high frequency, high current applications. These new devices provide a path to approximately double the power density of brick-typestandard converters. This paper describes the development of an eighth-brick (E-brick) demonstration converter which uses the latest generatione GaN FETs. This converter is capable of output power greater than500 W with an output of 12V and 42A and achieves a peak efficiency of 96.7% with 52V input voltage.
●Introduction
■DC-DC "brick" converters have wide usage in telecommunications, networking, and data centers due to adoption of a common footprint defined by the Distributed-power Open Standards Alliance (DOSA) and generally accepted input/output voltage ranges [1]. A key component of typical server power distribution systems is the standard "brick" format DC-DC converter. These converters provide isolation and voltage step-down and often reside on motherboards where they drive point-of-load converters for processors and memory. Increasing data processing throughput requires more power, more board real estate, or both. Power processing is considered a cost, and data processing a source of profit. Hence, there is great pressure to increase power density.
■The quarter-brick (Q-brick) and eighth-brick (E-brick) converters are commonly used to convert a nominal 48V -52V backplane to a nominal 12V motherboard distribution bus. The main trend has been towards higher power density. Another trend has been an improvement in the regulation of the input bus, which allows a reduced converter input voltage range. This allows further improvement in power density, and in some cases even unregulated converters. For the Q-brick format, this has led to output powers in the 800W range, with output currents approaching 80A [2]
■The E-brick format has not kept pace with the developments in the Q-brick. Many E-brick converters allow a wide input voltage range (36V –75V) and have maximum power levels near 250W [3]. There are a few examples that are in line with the Q-brick trends, with narrow-range inputs and output powers of 300W [4, 5]. The need for higher power is being felt here as well, but there are additional challenges with the smaller E-brick format, discussed below.
■The introduction of commercially available low-voltage GaN FETs is dramatically changing the achievable power levels and efficiencies in brick converters. The recently introduced fourth generation of eGaN FETs, shown in Fig. 1, have figures of merit (FOMs) up to 14x better than silicon, breaking down the barriers towards significantly greater converter power density. In this paper we describe a300 kHz E-brick converter using the new generation of commercially available eGaN FETs to enable a 500W output.
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2017/06/16 |
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915 KB |
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